Analog Power
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
AM4512AC
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m(Ω)
60 @ V
GS
= 4.5V
30
80 @ V
GS
= -4.5V
-30
I
D
(A)
5.0
-4.2
1
2
3
4
8
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Symbol N-Channel P-Channel Units
Parameter
30
-30
Drain-Source Voltage
V
DS
V
V
GS
±12
±20
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
a
o
o
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
P
D
T
J
, T
stg
5.0
4.1
20
1.3
2.1
1.3
-5.2
-6.8
-20
-1.3
2.1
1.3
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
Operating Junction and Storage Temperature Range
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
θJA
Maximum
62.5
110
Units
o
o
t <= 10 sec
Steady-State
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM4512A_F
ANALOGPOWER [ ANALOG POWER ]
