Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
AM4825PE
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m(Ω)
13 @ V
GS
= -10V
-30
19 @ V
GS
= -4.5V
SOIC-8
Top View
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
G
I
D
(A)
-11.5
-9.3
S
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
-30
Drain-Source Voltage
V
DS
V
V
GS
±25
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
a
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
-11.5
-9.3
±50
-2.1
3.1
2.3
-55 to 150
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Case
a
Maximum Junction-to-Ambient
a
Symbol
R
θJC
R
θJA
t <= 5 sec
t <= 5 sec
Maximum
25
50
Units
o
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM4825PE_A
ANALOGPOWER [ ANALOG POWER ]
