Analog Power
N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
AM4960N
PRO
DUCT SUM A
M RY
V (V
)
r
DS(on)
m
(Ω)
DS
89 @ V
S
= 10V
G
60
104 @ V
S
= 4.5V
G
SOIC-8
Top View
1
2
3
4
8
7
6
5
D1
D1
D2
D2
G
1
D
1
I
D
(A
)
±4.0
±3.7
D
2
G
2
G1
S1
S2
G2
S
1
N-Channel
MOSFET
S
2
N-Channel
MOSFET
ABSOLUTE MAX
IMUM RATING (T
A
= 25 C UNLESS OTHERW
S
ISE NOTED)
Param
eter
Sym
bol
Lim
it Units
V
DS
60
Drain-Source Voltage
V
V
GS
±20
G
ate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
a
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
±4.0
±3.3
±25
2
2.1
1.3
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
Operating Junction and Storage Tem
perature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
t <= 10 sec
t <= 5 sec
R
θJA
Maximum
62.5
110
Units
o
C/W
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM4960_A
ANALOGPOWER [ ANALOG POWER ]
