Analog Power
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r
DS(on)
assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
•
•
•
•
Low r
DS(on)
Provides Higher Efficiency and
Extends Battery Life
Miniature TO-252 Surface Mount Package
Saves Board Space
High power and current handling capability
Low side high current DC-DC Converter
applications
AM50N03-12I
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m(Ω)
13 @ V
GS
= 10V
30
20 @ V
GS
= 4.5V
I
D
(A)
51
41
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Symbol
Limit
Units
Parameter
30
V
DS
Drain-Source Voltage
V
V
GS
Gate-Source Voltage
±20
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
a
b
a
a
o
T
C
=25 C I
D
o
51
40
30
50
I
DM
I
S
o
T
C
=25 C P
D
A
A
W
o
Continuous Source Current (Diode Conduction)
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Maximum
50
3.0
Units
o
R
θJA
R
θJC
C/W
o
C/W
1
November, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM50N03-12I_A