Analog Power
AM50N10-18D
N-Channel 100-V (D-S) MOSFET
Key Features:
• Low r
DS(on)
trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
PRODUCT SUMMARY
r
DS(on)
(mΩ)
V
DS
(V)
18 @ V
GS
= 10V
100
24 @ V
GS
= 5.5V
I
D
(A)
43
37
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
V
DS
Drain-Source Voltage
100
V
GS
Gate-Source Voltage
±20
T
C
=25°C
I
D
43
Continuous Drain Current
a
b
I
DM
Pulsed Drain Current
160
a
I
S
55
Continuous Source Current (Diode Conduction)
a
T
C
=25°C
P
D
50
Power Dissipation
T
J
, T
stg
-55 to 150
Operating Junction and Storage Temperature Range
Units
V
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Symbol Maximum
R
θJA
40
R
θJC
3
Units
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM50N10-18D_1A