Analog Power
AM5430N
N-Channel 30-V (D-S) MOSFET
Key Features:
• Low r
DS(on)
trench technology
• Low thermal impedance
• Fast switching speed
• Small Footprint DFN3x2-8L package
Typical Applications:
• Portable Computing Power Conversion
• Portable Entertainment and GPS Power
Conversion
PRODUCT SUMMARY
r
DS(on)
(m )
V
DS
(V)
22 @ V
GS
= 10V
30
30 @ V
GS
= 4.5V
I
D
(A)
10
8.5
DFN3x2-8L EP
D
D
D
D
G
S
S
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
V
DS
Drain-Source Voltage
30
V
GS
Gate-Source Voltage
±20
T
A
=25°C
10
I
D
Continuous Drain Current
a
T
A
=70°C
7.5
b
I
DM
Pulsed Drain Current
30
a
I
S
4.4
Continuous Source Current (Diode Conduction)
T
A
=25°C
3.5
P
D
Power Dissipation
a
T
A
=70°C
2
T
J
, T
stg
-55 to 150
Operating Junction and Storage Temperature Range
Units
V
A
A
W
°C
Maximum Junction-to-Ambient
a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
35
R
θJA
81
Units
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS-AM5430N
ANALOGPOWER [ ANALOG POWER ]
