Analog Power
N & P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r
DS(on)
and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DFN2X3 saves board space
Fast switching speed
High performance trench technology
S1
G1
S2
G2
1
2
3
4
AM5521C
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
20
-20
DFN2x3
Top View
8
7
6
5
D
1
D
1
D
2
D
2
I
D
(A)
5
4.3
-4.7
-4.1
S
2
G
2
0.058 @ V
GS
= 4.5V
0.077 @ V
GS
= 2.5V
0.064 @ V
GS
= -4.5V
0.085 @ V
GS
= -2.5V
D
1
G
1
D
2
S
1
N-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel Units
Drain-Source Voltage
V
DS
20
-20
V
V
GS
Gate-Source Voltage
±8
±8
Continuous Drain Current
Pulsed Drain Current
b
a
o
o
a
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
P
D
T
J
, T
stg
5
4.1
8
4.5
2.1
1.3
-4.7
-3.9
-8
-4.5
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
Operating Junction and Storage Temperature Range
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
t <= 10 sec
Steady State
R
θJA
Maximum
62.5
80
Units
o
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM5521C_A
ANALOGPOWER [ ANALOG POWER ]
