Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
CF1206-8 saves board space
Fast switching speed
High performance trench technology
AM5931P
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(OHM)
0.084 @ V
GS
= -10V
-30
0.130 @ V
GS
= -4.5V
CF1206-8
Top View
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D
1
D
1
D
2
D
2
G
1
D
1
P-Channel MOSFET
I
D
(A)
-3.1
-2.5
S
1
G
2
S
2
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
V
DS
Drain-Source Voltage
-30
V
±20
Gate-Source Voltage
V
GS
Continuous Drain Current
Pulsed Drain Current
b
a
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
-3.1
-2.5
-10
±1.6
1.15
0.7
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
thJA
Typ
93
130
Max
110
150
o
t <= 10 sec
Steady State
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM5931_A
ANALOGPOWER [ ANALOG POWER ]
