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AM60N02-10D 参数 Datasheet PDF下载

AM60N02-10D图片预览
型号: AM60N02-10D
PDF下载: 下载PDF文件 查看货源
内容描述: N通道20 -V (D -S )的MOSFET [N-Channel 20-V (D-S) MOSFET]
分类和应用:
文件页数/大小: 3 页 / 145 K
品牌: ANALOGPOWER [ ANALOG POWER ]
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Analog Power
N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DPAK saves board space
Fast switching speed
High performance trench technology
AM60N02-10D
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m(Ω)
10 @ V
GS
= 4.5V
20
16 @ V
GS
= 2.5V
I
D
(A)
58
46
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Symbol
Limit
Units
Parameter
20
V
DS
Drain-Source Voltage
V
V
GS
Gate-Source Voltage
±8
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
a
b
a
a
o
T
C
=25 C I
D
o
58
40
30
50
I
DM
I
S
o
T
C
=25 C P
D
A
A
W
o
Continuous Source Current (Diode Conduction)
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Maximum
50
3.0
Units
o
R
θJA
R
θJC
C/W
o
C/W
1
PRELIMINARY
Publication Order Number:
DS-AM60N02-10_A