Analog Power
Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r
DS(on)
assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
•
•
•
•
Low r
DS(on)
Provides Higher Efficiency and
Extends Battery Life
Miniature SO-8 Surface Mount Package
Saves Board Space
High power and current handling capability
Low side high current DC-DC Converter
applications
AM6930N
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m(Ω)
40 @ V
GS
= 10V
30
55 @ V
GS
= 4.5V
I
D
(A)
5.5
4.8
1
2
3
4
8
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Units
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
± 20
V
GS
Continuous Drain Current
Pulsed Drain Current
b
a
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
± 5.5
± 20
± 20
1.3
2.1
1.3
-55 to 150
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Case
a
Maximum Junction-to-Ambient
a
Symbol
t <= 5 sec
t <= 5 sec
R
θJC
R
θJA
Maximum
40
60
Units
o
C/W
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
September, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM6930_B
ANALOGPOWER [ ANALOG POWER ]
