Analog Power
AM6968NE
Dual N-Channel 20-V (D-S) MOSFET
Key Features:
• Low r
DS(on)
trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• Battery Powered Instruments
• Portable Computing
• Mobile Phones
• GPS Units and Media Players
V
DS
(V)
20
PRODUCT SUMMARY
r
DS(on)
(m )
26 @ V
GS
= 4.5V
35 @ V
GS
= 2.5V
46 @ V
GS
= 1.8V
I
D
(A)
6.8
5.8
4.7
ABSOLUTE MAXIMUM RATINGS (T
A
= 25° UNLESS OTHERWISE NOTED)
C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
b
Symbol
V
DS
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
S
T
A
=25°
C
T
A
=70°
C
P
D
T
J
, T
stg
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
Operating Junction and Storage Temperature Range
Limit
20
±8
6.8
5.5
30
2.2
1.5
1
-55 to 150
Units
V
A
A
W
°
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
t <= 10 sec
Steady State
Symbol
R
θJA
Maximum
83
120
Units
°
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number: DS_AM6968NE_1A