Analog Power
AM7300N
N-Channel 300-V (D-S) MOSFET
Key Features:
• Low r
DS(on)
trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
PRODUCT SUMMARY
r
DS(on)
(mΩ)
V
DS
(V)
600 @ V
GS
= 10V
300
900 @ V
GS
= 5.5V
I
D
(A)
2.4
1.9
DFN3x3-8L
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
V
DS
Drain-Source Voltage
300
V
GS
Gate-Source Voltage
±20
T
A
=25°C
2.4
I
D
Continuous Drain Current
a
T
A
=70°C
1.9
b
I
DM
Pulsed Drain Current
10
a
I
S
6.2
Continuous Source Current (Diode Conduction)
T
A
=25°C
5
P
D
Power Dissipation
a
T
A
=70°C
3.2
T
J
, T
stg
-55 to 150
Operating Junction and Storage Temperature Range
Units
V
A
A
W
°C
Maximum Junction-to-Ambient
a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
25
R
θJA
65
Units
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS-AM7300N-1A