Analog Power
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
AM7530C
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m( )
30
-30
58 @ V
GS
= 4.5V
82 @ V
GS
= 2.5V
112 @ V
GS
= -4.5V
172 @ V
GS
= -2.5V
I
D
(A)
6.4
5.4
-4.6
-3.7
SOIC-8PP
Top View
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
G
1
D1
G
2
S
2
S
1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel Units
Drain-Source Voltage
V
DS
30
-30
V
8
-8
Gate-Source Voltage
V
GS
Continuous Drain Current
Pulsed Drain Current
b
a
o
o
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
P
D
T
J
, T
stg
6.4
5.2
±20
2.9
3.5
2.2
-55 to 150
-4.6
-3.8
±20
-2.9
3.5
2.2
-55 to 150
o
A
A
W
C
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
θJA
t <= 10 sec
Steady State
Maximum
35
85
Units
o
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM7530_A
ANALOGPOWER [ ANALOG POWER ]
