Analog Power
Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8PP saves board space
Fast switching speed
High performance trench technology
AM7930N
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m( )
30
SOIC-8PP
Top View
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
I
D
(A)
37
30
D1
8 @ V
GS
= 10V
12 @ V
GS
= 4.5V
D1
G
1
G
1
S
1
S
1
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Paramete r
Symbol Limit
Units
Drain-Source Voltage
V
DS
30
V
V
GS
Gate-Source Voltage
20
Continuous Drain Current
Pulsed Drain Current
b
a
o
o
a
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
P
D
T
J
, T
stg
37
30
±50
13
16
10
-55 to 150
o
A
A
W
C
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
t <= 10 sec
Steady State
R
θJA
R
θJC
Maximum
35
8
Units
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM7930_A
ANALOGPOWER [ ANALOG POWER ]
