Analog Power
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, and cordless telephones.
AM90N03-26P
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m( )
26 @ V
GS
= 10V
30
40 @ V
GS
= 4.5V
I
D
(A)
88
a
D
1
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
TO-220 saves board space
Fast switching speed
High performance trench technology
G
1
S
1
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Units
V
DS
Drain-Source Voltage
30
V
Gate-Source Voltage
V
GS
±20
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
a
b
a
a
o
T
C
=25 C I
D
o
88
140
40
300
I
DM
I
S
o
T
C
=25 C P
D
A
A
W
o
Continuous Source Current (Diode Conduction)
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
C
T E
H RMA RESIST NC RA
L
A E TING
S
Param
eter
Sym
bol
M
axim Junction-to-Am
um
bient
M
axim Junction-to-Case
um
a
Maxim m U
u
nits
62.5
0.5
o
R
θJA
R
θJC
C/W
o
C/W
Notes
a.
Package Limited
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM90N03-26_A
ANALOGPOWER [ ANALOG POWER ]
