Analog Power
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r
DS(on)
assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
•
•
•
•
Low r
DS(on)
Provides Higher Efficiency and
Extends Battery Life
Miniature SO-8 Surface Mount Package
Saves Board Space
High power and current handling capability
Low side high current DC-DC Converter
applications
AM9412N
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m(Ω)
22 @ V
GS
= 10V
30
36 @ V
GS
= 4.5V
I
D
(A)
9.0
7.0
1
2
3
4
8
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
V
DS
Drain-Source Voltage
30
±20
Gate-Source Voltage
V
GS
Continuous Drain Current
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
a
Units
V
T
A
=25
o
C
T
A
=70
o
C
I
D
I
DM
I
S
9.0
7.4
30
1.6
3.1
2.0
-55 to 150
A
W
o
A
T
A
=25
o
C
T
A
=70
o
C
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
t <= 10 sec
Steady-State
R
θJA
Maximum
40
70
Units
o
C/W
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
November, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM9412_I
ANALOGPOWER [ ANALOG POWER ]
