Analog Power
P & N-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DPAK saves board space
Fast switching speed
High performance trench technology
AMD540CE
PRODUCT SUMMARY
V (V
)
r
DS(on)
m
(Ω)
DS
40
-40
46 @ V
GS
= 4.5V
36 @ V
GS
= 10V
48 @ V
GS
= -4.5V
38 @ V
GS
= -10V
D
1
I
D
(A)
28
33
-28
-33
S
2
G
1
G
2
S
S1 G1 D S2 G2
1
D
2
P-Channel MOSFET
N-Channel MOSFET
ESD Protected
2000V
ABSOLUTE MAX
IMUM RATING (T
A
= 25 C UNLESS OTHERW
S
ISE NOTED)
Sym
bol N-Channel P-Channel Units
Param
eter
Drain-Source Voltage
40
-40
V
DS
V
G
ate-Source Voltage
20
-20
V
GS
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
a
b
a
a
o
T
A
=25 C I
D
o
33
±40
30
50
-55 to 175
-33
±40
-30
50
-55 to 175
I
DM
I
S
T
J
, T
stg
o
T
A
=25 C P
D
A
A
W
o
Continuous Source Current (Diode Conduction)
Operating Junction and Storage Tem
perature Range
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Maximum
50
3.0
Units
o
R
θJA
R
θJC
C/W
o
C/W
1
PRELIMINARY
Publication Order Number:
DS-AMD540CE_F
ANALOGPOWER [ ANALOG POWER ]
