Model B100NA30X4
Chip Attenuator
100 Watts, 30 dB
Description
The B100NA30X4 is high performance Aluminum Nitride (AlN) chip
attenuator intended as a cost competitive alternative to Beryllium Oxide
(BeO). The termination is well suited to all cellular frequency bands such
as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power handling
makes the part ideal for terminating circulators, and for use in power
monitoring. The termination is also RoHS compliant!
General Specifications
Features:
•
RoHS Compliant
•
100 Watts
•
DC - 2.7 GHz
•
AlN Ceramic
•
Non-Nichrome Resistive
Element
•
Low VSWR
•
100% Tested
•
Small Size
Resistive Element
Substrate
Terminal Finish
Operating Temperature
Thick film
AlN Ceramic
Matte Tin over Nickel Barrier
-55 to +150°C (see de rating chart)
Tolerance is ±0.010”, unless otherwise specified. Designed to meet of exceed
applicable portions of MIL-E-5400.
All dimensions in inches.
Electrical Specifications
30 dB
±
2.0 dB, DC – 1.5 GHz
30 dB ± 2.5 dB, 1.5GHz – 2.5GHz
100 Watts
Power:
DC – 2.7 GHz
Frequency Range:
>24 dB to 2.2 GHz
Return Loss:
>20 dB to 2.7GHz
Value (A-B)
Value (A-C)
Value (B-C)
Tolerance
93.5
Ω
49.9
Ω
49.9
Ω
± 4%
Attenuation Value:
Specification based on unit properly installed using suggested mounting instructions
and a 50 ohm nominal impedance.
Specifications subject to change.
Outline Drawing
B100NA30X4 (097) Rev. D pg.1 of 2
Available on Tape
and Reel For Pick and
Place Manufacturing.
USA/Canada:
Toll Free:
Europe
:
(315) 432-8909
(800) 544-2414
+44 2392-232392