Low voltage, Low power, ±1% High detect accuracy CMOS Voltage Detector
Rev. E13-01
VDA Series
ELECTRICAL CHARACTERISTICS
(Ta=25°C unless otherwise specified)
Items
Operating voltage
Symbol
V
IN
V
DET
Detection voltage
V
DET
Hysteresis range
V
HYS
V
IN
=0.7V
V
IN
=1.0V
V
IN
=2.0V
V
IN
=3.0V
V
IN
=4.0V
V
IN
=5.0V
CMOS P-ch
V
DS
=2.1V
CMOS N-ch
V
DS
=2.1V
V
IN
=6.0V
V
IN
=6.0V
V
IN
=1.5V
V
IN
=2.0V
Current consumption
I
SS
V
IN
=3.0V
V
IN
=4.0V
V
IN
=5.0V
Leak current
I
LEAK
V
IN
=6.0V V
OUT
=6.0V
V
DET
= 1.8V ~ 6.0V
Ta = –40°C ~ +85°C
V
DET
= 0.8V ~ 1.7V
Ta = –40°C ~ +85°C
Inverts from V
DR
to V
OUT
Conditions
V
DET
= 0.8V ~ 6.0V
V
DET
= 1.8V ~ 6.0V
Ta = –40°C ~ +85°C
V
DET
= 0.8V ~ 1.7V
Ta = –40°C ~ +85°C
Min.
0.7
V
DET
×0.99
V
DET
×0.98
V
DET
×0.02
0.1
1.0
3.0
5.0
6.0
7.0
-
1.5
-
-
-
-
-
-
-
-
-
Typ.
-
V
DET
V
DET
V
DET
×0.05
0.35
2.3
8.2
11.1
12.8
13.8
-9.5
9.5
0.6
0.7
0.8
0.9
1.0
10
±20
±100
0.03
Max.
6.0
V
DET
×1.01
V
DET
×1.02
V
DET
×0.08
-
-
-
-
-
-
-1.5
-
2.1
2.5
2.8
3.0
3.4
100
-
-
0.2
Unit
V
V
1
V
V
mA
mA
mA
3
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
nA
ppm/°C
1
ppm/°C
ms
5
3
2
4
3
1
Test
circuit
1
N-ch
V
DS
=0.5V
Output current
I
OUT
Detection voltage
temperature coefficient
Delay time
V
DR
→V
OUT
inversion
∆V
DET
/
∆Ta•V
DET
T
DLY
AnaSem
4
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