Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
ELECTRICAL CHARACTERISTICS
(Ta=25°C unless otherwise specified)
Items
Operating voltage
Detection voltage
Hysteresis range
Symbol
V
IN
V
DET
V
HYS
V
IN
=0.7V
V
IN
=1.0V
V
IN
=2.0V
V
IN
=3.0V
V
IN
=4.0V
V
IN
=5.0V
CMOS P-ch
V
DS
=2.1V
CMOS N-ch
V
DS
=2.1V
V
IN
=6.0V
V
IN
=6.0V
V
IN
=1.5V
V
IN
=2.0V
Current consumption
I
SS
V
IN
=3.0V
V
IN
=4.0V
V
IN
=5.0V
Leak current
Detection voltage
temperature coefficient
I
LEAK
∆V
DET
/
∆Ta•V
DET
V
IN
=6.0V V
OUT
=6.0V
V
DET
= 1.8V ~ 6.0V
Ta = –40°C ~ +85°C
Conditions
V
DET
= 1.8V ~ 6.0V
V
DET
= 1.8V ~ 6.0V
Ta = –40°C ~ +85°C
Min.
0.7
V
DET
×0.99
V
DET
×0.02
0.1
1.0
3.0
5.0
6.0
7.0
-
1.5
-
-
-
-
-
-
-
10
Delay time
V
REL
→V
OUT
inversion
T
DLY
V
IN
= 0.7V ~ 6.0V
50
80
Typ.
-
V
DET
V
DET
×0.05
0.4
2.3
8.2
11.1
12.8
13.8
-9.5
9.5
0.6
0.7
0.8
0.9
1.0
10
±20
-
-
-
Max.
6.0
V
DET
×1.01
V
DET
×0.08
-
-
-
-
-
-
-1.5
-
2.1
2.5
2.8
3.0
3.4
100
-
50
200
400
Unit
V
V
V
mA
mA
mA
3
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
nA
ppm/°C
ms
ms
ms
5
3
1
2
4
3
Test
circuit
1
1
1
N-ch
V
DS
=0.5V
Output current
I
OUT
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