High speed, Low dropout, ±1% High output accuracy Dual CMOS Voltage Regulator
Rev. E13-01
VRD Series
ELECTRICAL CHARACTERISTICS (CONTINUED)
(Ta=25°C unless otherwise specified)
Items
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
circuit
2
Current consumption
I
DD
V
IN
=V
OUT
+1.0V, V
OUT
=Open, I
OUT
=0mA
-
50
80
µA
Standby current
I
STB
EN=V
SS
-
0.01
0.1
µA
2
Input voltage
V
IN
1.6
-
6.0
V
1
Load regulation
∆V
OUT
V
IN
=V
OUT
+1.0V, I
OUT
=0.1mA ~100mA
-
10
40
mV
1
Line regulation
∆V
OUT
/
V
OUT
+1.0V≦V
IN
≦6.0V,
I
OUT
=30mA
∆V
IN
•V
OUT
Rr
V
IN
=V
OUT
+1.0V, f=1KHz,
∆V
RIP
=0.5V
P
-
P
, I
OUT
=30mA
EN=V
IN
-
0.01
0.1
%/V
1
Ripple rejection
-
75
-
dB
3
Limit current
I
LIMIT
300
-
-
mA
1
Short circuit current
Output voltage
temperature coefficient
EN high level voltage
I
SHORT
V
IN
=V
OUT
+1.0V, V
OUT
=0V
-
40
-
mA
ppm
/°C
1
∆V
OUT
/ V
EN
=V
IN
, I
OUT
=300mA
∆Ta•V
OUT
Ta=–40°C ~ +85°C
V
ENH
1.2
±20
1
-
6.0
V
1
EN low level voltage
V
ENL
-
-
0.3
V
1
EN high level current
I
ENH
V
EN
= V
IN
–0.1
-
0.1
µA
1
EN low level current
C
L
auto-discharge
resistance
I
ENL
V
EN
= V
SS
–0.1
-
0.1
µA
1
R
DIS
V
IN
=6.0V, V
OUT
=4.0V, V
EN
= V
SS
-
160
-
Ω
1
AnaSem
7
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