APM2007
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.020
0.018
I
D
=30A
On-Resistance vs. Junction Temperature
1.8
V
GS
=4.5V
I
D
=20A
R
DS(ON)
-On-Resistance (Ω)
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
1
2
3
4
5
6
7
8
9
10
R
DS(ON)
-On-Resistance (Ω)
(Normalized)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
75
100 125 150
V
GS
- Gate-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
Gate Charge
5
V
DS
=10V
I
D
=5A
Capacitance
4000
3500
Frequency=1MHz
V
GS
-Gate-Source Voltage (V)
4
Capacitance (pF)
3000
2500
2000
1500
1000
500
Coss
Crss
Ciss
3
2
1
0
0
5
10
15
20
25
30
35
0
0
5
10
15
20
Q
G
- Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
4
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
