APM2054NU
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
V
GS
=0V, I
DS
=250µA
V
DS
=16V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250
µ
A
V
GS
=±16V, V
DS
=0V
V
GS
=10V, I
DS
=12A
R
DS(ON) a
Drain-Source On-state Resistance
V
GS
=4.5V, I
DS
=6A
V
GS
=2.5V, I
DS
=2A
Diode Characteristics
V
SD
a
(T
A
= 25°C unless otherwise noted)
APM2054NU
Min.
Typ.
Max.
Parameter
Test Condition
Unit
20
1
30
0.6
0.7
35
45
110
1.5
±100
40
54
130
V
µ
A
V
nA
mΩ
Diode Forward Voltage
I
SD
=6A, V
GS
=0V
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
V
DD
=10V, R
L
=10
Ω
,
I
DS
=1A, V
GEN
=4.5V,
R
G
=6
Ω
0.7
1.3
V
Ω
pF
Dynamic Characteristics
b
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Notes:
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
2.3
450
100
60
7
15
19
6
10
25
26
7
ns
Gate Charge Characteristics
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
3.8
V
DS
=10V, V
GS
=4.5V,
I
DS
=12A
1.2
1.4
5
nC
Copyright
©
ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
3
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
