APM2054NV
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise noted)
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θ
JA
*
Note:
*Surface Mounted on 1in
pad area, t
≤
10sec.
2
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Power Dissipation for Single Operation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=100°C
V
GS
=10V
Rating
20
±16
5
20
3
150
-55 to 150
1.47
0.58
85
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
SD a
a
Parameter
Test Condition
APM2054NV
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
=16V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±16V, V
DS
=0V
V
GS
=10V, I
DS
=5A
V
GS
=4.5V, I
DS
=3.5A
V
GS
=2.5V, I
DS
=2.5A
I
SD
=3A, V
GS
=0V
20
1
30
0.6
0.9
35
45
110
0.85
1.5
±100
40
54
130
1.3
V
µA
V
nA
mΩ
Diode Forward Voltage
V
Gate Charge Characteristics
b
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=10V, V
GS
=4.5V,
I
DS
=6A
11
3.8
5.2
13
nC
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
2
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
