APM2055N
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.200
I
D
=5A
On-Resistance vs. Junction Temperature
2.25
V
GS
=4.5V
2.00
I
D
=5A
R
DS(ON)
-On-Resistance (Ω)
0.175
0.150
0.125
0.100
0.075
0.050
0.025
R
DS(ON)
-On-Resistance (Ω)
(Normalized)
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
1
2
3
4
5
6
7
8
0.00
-50
-25
0
25
50
75
100 125 150
V
GS
- Gate-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
Gate Charge
5
V
DS
=15V
I
D
=1.5A
Capacitance
600
500
Frequency=1MHz
V
GS
-Gate-Source Voltage (V)
4
Capacitance (pF)
400
300
200
Ciss
3
2
1
Coss
100
0
Crss
0
0
1
2
3
4
5
6
7
8
0
5
10
15
20
Q
G
- Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
4
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
