APM2055N
N-Channel Enhancement Mode MOSFET
Features
•
20V/12A, R
DS(ON)
=55mΩ(typ.) @ V
GS
=10V
R
DS(ON)
=75mΩ(typ.) @ V
GS
=4.5V
R
DS(ON)
=140mΩ(typ.) @ V
GS
=2.5V
Pin Description
•
•
•
Super High Dense Cell Design
High Power and Current Handling Capability
TO-252 and SOT-223 Packages
1
2
3
1
2
3
G
D
S
G
D
S
Top View of TO-252
D
Top View of SOT-223
Applications
•
•
Switching Regulators
Switching Converters
G
Ordering and Marking Information
A P M 2 055 N
H a n d lin g C o d e
Tem p. R ange
Package C ode
S
N-Channel MOSFET
Package C ode
U : T O -2 5 2
V : S O T -2 2 3
O p e ra tio n J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0
°
C
H a n d lin g C o d e
TR : Tape & R eel
AP M 2055N U :
AP M 2055N
XXXXX
XXXXX
- D a te C o d e
AP M 2055N V :
AP M 2055N
XXXXX
XXXXX
- D a te C o d e
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
I
DM
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
20
±16
12
20
A
V
Unit
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
1
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
