APM2095P
P-Channel Enhancement Mode MOSFET
Features
•
•
•
•
-20V/-3.6A , R
DS(ON)
=70mΩ(typ.) @ V
GS
=-4.5V
R
DS(ON)
=100mΩ(typ.) @ V
GS
=-2.5V
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
TO-252 Package
Pin Description
G
D
S
Applications
•
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Top View of TO-252
Ordering and Marking Information
APM 2095P
H a n d lin g C o d e
Tem p. R ange
P ackage C ode
P ackage C ode
U : T O -2 5 2
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 ° C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
A P M 2095P U :
A P M 2095P
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
I
DM
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
-20
±10
-3.6
-20
A
V
Unit
Maximum Drain Current – Continuous
Maximum Pulsed Drain Current (pulse width
≤
300µs)
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
1
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
