APM2306A
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θJA
*
Note:
*Surface Mounted on 1in
pad area, t
≤
10sec.
2
(T
A
= 25°C unless otherwise noted)
Rating
30
±20
3.5
V
GS
=10V
14
1.3
150
-55 to 150
T
A
=25°C
T
A
=100°C
0.83
0.3
150
W
°C/W
V
A
A
°C
Unit
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Electrical Characteristics
Symbol
Parameter
(T
A
= 25°C unless otherwise noted)
Test Condition
APM2306A
Min.
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
SD
a
a
V
GS
=0V, I
DS
=250µA
V
DS
=24V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=3.5A
V
GS
=5V, I
DS
=2.8A
I
SD
=1.25A, V
GS
=0V
30
1
30
1
1.5
42
70
0.8
2
±100
65
90
1.3
V
µA
V
nA
mΩ
V
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Diode Forward Voltage
b
Gate Charge Characteristics
Q
g
Total Gate Charge
Q
gs
Q
gd
Gate-Drain Charge
12.5
V
DS
=15V, V
GS
=10V,
I
DS
=3.5A
2.4
1.3
16
nC
Gate-Source Charge
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Jan., 2005
2
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
