APM2306
N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
30V/3.5A, R
DS(ON)
=70mΩ(typ.) @ V
GS
=5V
R
DS(ON)
=42mΩ(typ.) @ V
GS
=10V
Super High Dense Cell Design
High Power and Current Handling Capability
SOT-23 Package
Pin Description
D
3
1
2
Applications
•
•
Switching Regulators
Switching Converters
G
S
Top View of SOT-23
Ordering and Marking Information
A P M 23 06
H andling C ode
T em p. R an ge
Package Code
Package Code
A : S O T -23
O perating Junction T em p. R ange
C : -55 to 1 50
°
C
H andling C ode
T R : T ape & R eel
A P M 2306 A :
M 06X
X - D ate C ode
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
J
T
STG
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
30
±20
3.5
16
T
A
=25°C
1.25
0.5
150
-55 to 150
Unit
V
A
W
W
°C
°C
Maximum Pulsed Drain Current ( pulse width
≤
300µs)
Maximum Drain Current – Pulsed
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
T
A
=100°C
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
1
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
