APM2315A
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θ
JA
*
Note:
*Surface Mounted on 1in
pad area, t
≤
10sec.
2
(T
A
= 25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=100°C
V
GS
=-4.5V
Rating
-20
±12
-4
-16
-1.5
150
-55 to 150
0.83
0.3
150
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM2315A
Min.
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
V
GS(th)
I
GSS
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
V
GS
=0V, I
DS
=-250µA
V
DS
=-16V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±10V, V
DS
=0V
V
GS
=-4.5V, I
DS
=-4A
-20
-1
-30
-0.5
-0.7
35
45
60
-0.75
-1
±100
55
72
100
-1.3
V
µA
V
nA
mΩ
V
R
DS(ON) a
Drain-Source On-state Resistance
V
SD a
Diode Forward Voltage
V
GS
=-2.5V, I
DS
=-2.5A
V
GS
=-1.8V, I
DS
=-2A
I
SD
=-0.5A, V
GS
=0V
Gate Charge Characteristics
b
Q
g
Total Gate Charge
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain Charge
V
DS
=-10V, V
GS
=-4.5V,
I
DS
=-4A
12
2.1
2.9
16
nC
Copyright
©
ANPEC Electronics Corp.
Rev. B.1 - Aug., 2005
2
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
