APM2322
N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
20V/1.5A , R
DS(ON)
=195mΩ(typ.) @ V
GS
=4.5V
R
DS(ON)
=295mΩ(typ.) @ V
GS
=2.5V
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
SOT-23 Package
Pin Description
D
G
D
S
Top View of SOT-23
Applications
•
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
G
S
N-Channel MOSFET
Ordering and Marking Information
A P M 23 22
H andling C ode
T em p. R an ge
Package Code
Package Code
A : S O T -23
O perating Junction T em p. R ange
C : -55 to 1 50
°
C
H andling C ode
T R : T ape & R eel
A P M 2322 A :
M 22X
X - D ate C ode
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
(T
A
= 25°C unless otherwise noted)
Rating
20
±8
1.5
5.6
A
V
Unit
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed(Pulse width
≤
300µs)
I
DM
* Surface Mounted on FR4 Board, t
≤
10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain
the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
1
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
