APM2506NU
Electrical Characteristics
Symbol
Parameter
(T
A
=25°C)
APM2506NU
Min.
Typ.
Max.
Test Condition
Unit
Drain-Source Avalanche Ratings
E
AS
Drain-Source Avalanche Energy
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
I
D
=45A, V
DD
=15V
25
100
mJ
V
GS
=0V, I
DS
=250µA
V
DS
=20V, V
GS
=0V
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=40A
V
GS
=4.5V, I
DS
=20A
I
SD
=20A , V
GS
=0V
T
A
=25°C
V
1
µA
V
nA
mΩ
1.5
5
7
2
±100
6
10
1
R
DS(ON) a
Drain-Source On-state Resistance
Diode
V
SDa
I
S
Diode Forward Voltage
Diode continuous forward current
0.7
1.3
40
V
A
Dynamic
b
C
iss
Input Capacitance
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
GS
=0V
V
DS
=15V
Frequency=1.0MHz
3000
670
360
13
20
15
66
28
9
43
14
pF
pF
pF
ns
ns
ns
ns
V
DD
=15V, R
L
=15Ω
I
DS
=1A, V
GEN
=10V,
R
G
=6Ω
Gate Charge
b
Q
g
Total Gate Charge
Q
gs
Q
gd
Notes：
a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%
b : Guaranteed by design, not subject to production testing
32
V
DS
=15V, V
GS
=4.5V,
I
DS
=20A
6.6
12.4
42
nC
nC
nC
Gate-Source Charge
Gate-Drain Charge
Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
3
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
