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APM2601CC-TR 参数 Datasheet PDF下载

APM2601CC-TR图片预览
型号: APM2601CC-TR
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型MOSFET [P-Channel Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 9 页 / 603 K
品牌: ANPEC [ ANPEC ELECTRONICS COROPRATION ]
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APM2601
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
(IR/Convection or VPR Reflow)
Reflow Condition
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Peak temperature
183
°
C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/ Convection
Average ramp-up rate(183°C to Peak)
Preheat temperature 125
±
25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak
temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature
3°C/second max.
120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds
220 +5/-0°C or 235 +5/-0°C
6
°C
/second max.
6 minutes max.
VPR
10
°C
/second max.
60 seconds
215~ 219°C or 235 +5/-0°C
10
°C
/second max.
Package Reflow Conditions
pkg. thickness
2.5mm
and all bags
Convection 220 +5/-0
°C
VPR 215-219
°C
IR/Convection 220 +5/-0
°C
pkg. thickness < 2.5mm and
pkg. volume
350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0
°C
VPR 235 +5/-0
°C
IR/Convection 235 +5/-0
°C
www.anpec.com.tw
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003
7