APM3009N
N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
30V/70A , R
DS(ON)
=7mΩ(typ.) @ V
GS
=10V
R
DS(ON)
=11mΩ(typ.) @ V
GS
=4.5V
Super High Dense Advanced Cell Design for
Extremely Low R
DS(ON)
Reliable and Rugged
TO-220 , TO-252 and TO-263 Packages
Pin Description
1
2
3
Applications
•
Power Management in Desktop Computer or
DC/DC Converters.
G
D
S
Top View of TO-220, TO-252 and TO-263
Ordering and Marking Information
APM 3009N
H a n d lin g C o d e
Tem p. Range
Package Code
Package Code
F : T O -2 2 0
G : T O -2 6 3
U : T O -2 5 2
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 2 5
°
C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
A P M 3 0 0 9 N F /G /U :
A P M 3009N
XXXXX
XXXXX
- D a te C o d e
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D*
I
DM
Parameter
Drain-Source Voltage
Gate-Source Voltage
(T
A
= 25°C unless otherwise noted)
Rating
30
±20
60
110
Unit
V
A
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.3 - May., 2002
1
www.anpec.com.tw
* Surface Mounted on FR4 Board, t
≤
10 sec.
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
