APM3011N
N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
30V/60A , R
DS(ON)
=9mΩ(typ.) @ V
GS
=10V
R
DS(ON)
=14mΩ(typ.) @ V
GS
=5V
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
TO-220, TO-252 and TO-263 Packages
Pin Description
Applications
•
Power Management in Desktop Computer or
DC/DC Converters Systems.
Top View of TO-220 , TO-252 and TO-263
Ordering and Marking Information
APM3011N
Handling Code
Temp. Range
Package Code
Package Code
F : TO-220 U :TO-252
Temp. Range
C : 0 to 70
°
C
Handling Code
TU : Tube
TR : Tape & Reel
G : TO-263
APM 3011N G/U/F :
APM 3011N
XXXXX
XXXXX - Date Code
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D*
I
DM
Gate-Source Voltage
Parameter
Drain-Source Voltage
(T
A
= 25°C unless otherwise noted)
Rating
30
±20
60
120
Unit
V
A
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
* Surface Mounted on FR4 Board, t
≤
10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002
1
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
