APM3020PU
Typical Characteristics (Cont.)
Drain-Source On Resistance
1.8
V
GS
= -10V
1.6
I
DS
= -11A
10
T
j
=150 C
o
Source-Drain Diode Forward
30
Normalized On Resistance
1.2
1.0
0.8
0.6
0.4
-50 -25
R
ON
@T
j
=25 C: 17m
Ω
0
25
50
75 100 125 150
o
-I
S
- Source Current (A)
1.4
1
T
j
=25 C
o
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
T
j
- Junction Temperature (°C)
-V
SD
- Source - Drain Voltage (V)
Capacitance
3000
Frequency=1MHz
2500
Gate Charge
10
V
DS
= -15V
I
DS
= -11A
-V
GS
- Gate-source Voltage (V)
8
C - Capacitance (pF)
2000
Ciss
1500
6
4
1000
Coss
Crss
0
500
2
0
5
10
15
20
25
30
0
0
5
10
15 20 25 30 35 40 45
-V
DS
- Drain - Source Voltage (V)
Q
G
- Gate Charge (nC)
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
6
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
