APM3023N
Typical Characteristics (Cont.)
On-Resistaence vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
1.6
45
VGS=10V
ID=12A
IDS=20A
40
1.4
1.2
1.0
0.8
0.6
35
30
25
20
15
10
5
0
-50 -25
0
25 50
75 100 125 150
3
4
5
6
7
8
9
10
Gate Voltage (V)
Tj-Junction Temperature (°C)
Capacitance Characteristics
Gate Charge
2000
1000
500
10
8
Ciss
VDS=15V
IDS=10A
Coss
Crss
6
4
2
100
Frequency=1MHz
0
0
5
10
15
20
25
30
30
0.1
1
10
VDS-Drain-to-Source Voltage (V)
QG-Total Gate Charge (nC)
Copyright ANPEC Electronics Corp.
Rev. A.6 - July., 2003
4
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