APM3023N
N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
30V/30A, R
DS(ON)
=15mΩ(typ.) @ V
GS
=10V
R
DS(ON)
=22mΩ(typ.) @ V
GS
=5V
Super High Dense Cell Design
Pin Description
1
2
3
1
2
3
High Power and Current Handling Capability
TO-252.TO-220 and SOT-223 Packages
G
D
S
G
D
S
Top View of TO-252
Top View of SOT-223
Applications
•
•
Switching Regulators
Switching Converters
3
2
1
S
D
G
TO-220 Package
Ordering and Marking Information
A P M 3 023 N
H a n d lin g C o d e
Tem p. R ange
Package C ode
Package C ode
U : T O -2 5 2
V : S O T -2 2 3
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0
°
C
H a n d lin g C o d e
TR : Tape & R eel
F : T O -2 2 0
A P M 3 0 2 3 N U /F :
:
AP M 3023N
XXXXX
XXXXX
- D a te C o d e
AP M 3023N V :
AP M 3023N
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D*
I
DM
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
30
±20
30
70
Unit
V
A
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
* Surface Mounted on FR4 Board, t
≤
10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.6 - July., 2003
1
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
