APM3055L
N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
30V/12A, R
DS(ON)
=100mΩ(max) @ V
GS
=10V
R
DS(ON)
=200mΩ(max) @ V
GS
=4.5V
Super High Dense Cell Design
High Power and Current Handling Capability
TO-252 and SOT-223 Packages
Pin Description
1
1
2
3
2
3
G
D
S
Applications
•
•
Switching Regulators
Switching Converters
G
D
S
Top View of TO-252
Top View of SOT-223
Ordering and Marking Information
A P M 3 055 L
H a n d lin g C o d e
Tem p. R ange
Package C ode
AP M 3055L
XXXXX
Package C ode
U : T O -2 5 2
V : S O T -2 2 3
O p e ra tio n J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0
°
C
H a n d lin g C o d e
TR : Tape & R eel
A P M 3 0 5 5 L U /V :
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
I
DM
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
30
±20
15
30
A
V
Unit
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
1
www.anpec.com.tw