APM4220KA
Typical Characteristics (Cont.)
Drain-Source On Resistance
2.00
V
GS
= 10V
1.75
I
DS
= 12A
10
T
j
=150 C
T
j
=25 C
o
o
Source-Drain Diode Forward
50
Normalized On Resistance
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-50 -25
R
ON
@T
j
=25 C: 7.5m
Ω
0
25
50
75
100 125 150
o
I
S
- Source Current (A)
1
0.1
0.0
0.2 0.4
0.6
0.8
1.0
1.2 1.4
1.6
T
j
- Junction Temperature (°C)
V
SD
- Source - Drain Voltage (V)
Capacitance
3000
Frequency=1MHz
2500
10
V
DS
=10V
9 I = 12A
D
Gate Charge
V
GS
- Gate-source Voltage (V)
25
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
40
C - Capacitance (pF)
2000
Ciss
1500
1000
Coss
Crss
0
500
0
5
10
15
20
V
DS
- Drain - Source Voltage (V)
Q
G
- Gate Charge (nC)
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
6
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
