APM4220KA
Electrical Characteristics
Symbol
Parameter
(T
A
= 25°C unless otherwise noted)
Test Condition
APM4220KA
Min.
Typ.
Max.
Unit
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
SD
a
a
I
D
=15A, V
DD
=15V
25
50
mJ
V
GS
=0V, I
DS
=250µA
V
DS
=20V, V
GS
=0V
V
DS
=20V, V
GS
=0V
T
A
=25°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=16A
V
GS
=4.5V, I
DS
=14A
I
SD
=3A, V
GS
=0V
V
1
30
µA
V
nA
mΩ
V
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Diode Forward Voltage
b
1.3
1.8
7.5
10
0.8
2.5
±100
9
12
1.3
Gate Charge Characteristics
Q
g
Total Gate Charge
Q
gs
Q
gd
Gate-Drain Charge
b
20
V
DS
=10V, V
GS
=4.5V,
I
DS
=12A
4.8
8.4
26
nC
Gate-Source Charge
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
2
1785
500
300
10
19
13
95
46
Ω
pF
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=15V, R
L
=15Ω,
I
DS
=1A, V
GEN
=10V,
R
G
=6Ω
7
69
32
ns
Notes:
a: Pulse test ; pulse width
≤300µs,
duty cycle
≤
2%.
b: Guaranteed by design, not subject to production testing.
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
3
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
