APM4410
N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
30V/11.5A, R
DS(ON)
= 9mΩ(typ.) @ V
GS
= 10V
R
DS(ON)
=14.5mΩ(typ.) @ V
GS
= 4.5V
High Density Cell Design
Reliable and Rugged
SO-8 Package
Pin Description
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
Applications
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
SO
−
8
D
G
Ordering and Marking Information
APM 4410
H a n d lin g C o d e
Tem p. R ange
P ackage C ode
S
N-Channel MOSFET
P ackage C ode
K : S O -8
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 2 5 ° C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
APM 4410 K :
APM 4410
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
30
±20
11.5
50
T
A
=25°C
T
A
=100°C
2.5
1.0
W
Unit
V
A
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
Maximum Power Dissipation
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.5 - July., 2002
1
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
