APM4412K
Typical Characteristics (Cont.)
Drain-Source On Resistance
2.00
V
GS
= 10V
1.75
I
DS
= 12A
T
j
=150 C
10
o
o
Source-Drain Diode Forward
50
Normalized On Resistance
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-50 -25
R
ON
@T
j
=25 C: 9m
Ω
0
25
50
75 100 125 150
o
I
S
- Source Current (A)
T
j
=25 C
1
0.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T
j
- Junction Temperature (°C)
V
SD
- Source - Drain Voltage (V)
Capacitance
2400
2100
Frequency=1MHz
10
9
V
DS
= 15V
I
D
= 12A
Gate Charge
V
GS
- Gate - source Voltage (V)
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
1800
C - Capacitance (pF)
1500
1200
900
600
300
Crss
0
0
5
10
15
20
Coss
Ciss
25
30
V
DS
- Drain - Source Voltage (V)
Q
G
- Gate Charge (nC)
Copyright
©
ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
6
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
