APM4427K
Typical Characteristics (Cont.)
Drain-Source On Resistance
1.6
1.4
I
DS
= -250
µ
A
20
10
T
j
=150 C
o
Source-Drain Diode Forward
Normalized On Resistance
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
0.1
0.0
-I
S
- Source Current (A)
T
j
=25 C
1
o
0
25
50
75
100 125 150
0.2 0.4
0.6
0.8
1.0
1.2 1.4
1.6
T
j
- Junction Temperature (°C)
-V
SD
- Source - Drain Voltage (V)
Capacitance
800
700
Frequency=1MHz
10
V
DS
= -15V
9 I = -4A
D
Gate Charge
-V
GS
- Gate - source Voltage (V)
25
30
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
600
Ciss
C - Capacitance (pF)
500
400
300
200
100
0
Crss
Coss
0
5
10
15
20
-V
DS
- Drain - Source Voltage (V)
Q
G
- Gate Charge (nC)
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
6
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
