APM4429
P-Channel Enhancement Mode MOSFET
Features
•
-30V/-13A, R
DS(ON)
= 8mΩ(typ.) @ V
GS
= -20V
R
DS(ON)
= 9mΩ(typ.) @ V
GS
= -10V
R
DS(ON)
=13mΩ(typ.) @ V
GS
= -4.5V
Pin Description
5
5
5
&
%
,
,
,
,
!
"
$
#
•
•
•
Super High Density Cell Design
Reliable and Rugged
SO-8 Package
/
SO
−
8
S
S S
Applications
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G
Ordering and Marking Information
APM 4429
L e a d F re e C o d e
H a n d lin g C o d e
Tem p. R ange
P ackage C ode
D D D D
P-Channel MOSFET
P ackage C ode
K : S O -8
O p e ra tio n J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 °C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
L e a d F re e C o d e
L : L e a d F re e D e v ic e
B la n d : O rg in a l D e v ic e
X X X X X - D a te C o d e
APM 4429 K :
APM 4429
XXXXX
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
(T
A
= 25°C unless otherwise noted)
Rating
-30
±20
T
A
= 25°C
-13
-50
Unit
V
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current Continuous
Maximum Drain Current Pulsed
I
DM
* Surface Mounted on FR4 Board, t
≤
10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
1
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
