APM4430K
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θJA
*
Note:
*Surface Mounted on 1in
pad area, t
≤
10sec.
2
(T
A
= 25°C unless otherwise noted)
Rating
30
±20
V
GS
=10V
12.5
50
3.2
150
-55 to 150
T
A
=25°C
T
A
=100°C
2
0.8
62.5
W
°C/W
A
°C
V
A
Unit
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Electrical Characteristics
Symbol
Parameter
(T
A
= 25°C unless otherwise noted)
APM4430K
Min.
30
1
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=12.5A
V
GS
=5V, I
DS
=7A
I
SD
=2.3A, V
GS
=0V
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
V
DD
=15V, R
L
=15Ω,
I
DS
=1A, V
GEN
=10V,
R
G
=6Ω,
4.5
7
0.7
1.7
4720
815
240
21
15
102
37
2
Test Condition
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
SD
a
a
V
GS
=0V, I
DS
=250µA
V
DS
=24V, V
GS
=0V
V
30
µA
V
nA
mΩ
V
Ω
pF
38
27
148
55
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Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Diode Forward Voltage
b
1
1.5
2
±100
5
8
1.3
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
ns
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
