APM4500
Typical Characteristics
N-Channel MOSFET
Output Characteristics
20
V
GS
=3,4,5,6,7,8,9,10V
V
GS
=2.5V
Transfer Characteristics
20
I
D
-Drain Current (A)
I
D-
Drain Current (A)
16
16
12
12
8
V
GS
=2V
8
T
J
=125°C
T
J
=25°C
T
J
=-55°C
4
V
GS
=1.5V
4
0
0
1
2
3
4
5
6
7
8
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
I
DS
=250µA
On-Resistance vs. Drain Current
0.06
V
GS(th)-
Threshold Voltage (V)
(Normalized)
1.25
1.00
0.75
0.50
0.25
0.00
-50
R
DS(ON)
-On-Resistance (Ω)
0.05
0.04
V
GS
=2.5V
0.03
V
GS
=4.5V
0.02
0.01
0.00
-25
0
25
50
75
100 125 150
0
2
4
6
8
10
Tj - Junction Temperature (°C)
I
D
- Drain Current (A)
Copyright
ANPEC Electronics Corp.
Rev. A.2 - May., 2003
4
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ANPEC [ ANPEC ELECTRONICS COROPRATION ]
