APM4532K
Typical Characteristics (Cont.)
P-Channel
Drain-Source On Resistance
1.8
V
GS
= -10V
1.6
I
DS
= -3.5A
Source-Drain Diode Forward
20
10
o
Normalized On Resistance
-I
S
- Source Current (A)
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25
R
ON
@T
j
=25 C: 85m
Ω
0
25
50
75
100 125 150
o
T
j
=150 C
o
T
j
=25 C
1
0.1
0.04
0.0
0.4
0.8
1.2
1.6
2.0
T
j
- Junction Temperature (°C)
-V
SD
- Source - Drain Voltage (V)
Capacitance
800
Frequency=1MHz
700
9
10
V
DS
= -10V
I
DS
= -3.5A
Gate Charge
-V
GS
- Gate - source Voltage (V)
30
8
7
6
5
4
3
2
1
600
C - Capacitance (pF)
Ciss
500
400
300
200
100
Crss
0
0
5
10
15
20
25
Coss
0
0
1
2
3
4
5
6
7
8
-V
DS
- Drain - Source Voltage (V)
Q
G
- Gate Charge (nC)
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
9
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
