APM4532
Typical Characteristics (Cont.)
N-Channel
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
0.20
2.0
ID=5A
VGS=10V
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
ID=5A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Gate Charge
Capacitance
10
8
700
600
500
400
300
200
100
0
Frequency=1MHz
VDS=10 V
IDS= 5 A
Ciss
6
4
Coss
Crss
2
0
0
2
4
6
8
10
12
14
0
5
10
15
20
QG - Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
5
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ANPEC [ ANPEC ELECTRONICS COROPRATION ]
