APM4804K
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
30
10
1.8
VGS = 10V
IDS = 8A
1.6
Tj=150oC
1.4
1.2
1.0
0.8
0.6
Tj=25oC
1
RON@Tj=25oC: 17mΩ
0.1
0.4
-50 -25
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
25 50 75 100 125 150
VSD - Source-Drain Voltage (V)
Tj - Junction Temperature (°C)
Gate Charge
Capacitance
1400
1200
1000
800
600
400
200
0
10
Frequency=1MHz
VDS=15V
IDS=8A
8
6
4
2
0
Ciss
Coss
Crss
0
2
4
6
8
10 12 14 16
0
5
10
15
20
25
30
VDS - Drain-Source Voltage (V)
QG - Gate Charge (nC)
Copyright
ANPEC Electronics Corp.
6
www.anpec.com.tw
Rev. B.2 - Mar., 2005
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
